Semiconductor device and method of manufacturing the same, electronic device and method of manufacturing the same, and electronic instrument

ABSTRACT

A semiconductor device including: a semiconductor substrate in which an integrated circuit is formed; an insulating layer formed on the semiconductor substrate and having a first surface and a second surface which is higher than the first surface; a first electrode formed to avoid the second surface and electrically connected to the inside of the semiconductor substrate; and a second electrode formed on the second surface and electrically connected to the inside of the semiconductor substrate.

[0001] Japanese Patent Application No. 2003-115891, filed on Apr. 21,2003, is hereby incorporated by reference in its entirety.

BACKGROUND OF THE INVENTION

[0002] The present invention relates to a semiconductor device, a methodof manufacturing the semiconductor device, an electronic device, amethod of manufacturing the electronic device, and electronicinstrument.

[0003] A face down bonding is known as a mounting form for asemiconductor chip. This mounting form is used on the premise that thesemiconductor chip is mounted in a region without a level difference.Therefore, it is difficult to mount a semiconductor chip in a regionwith a level difference while preventing occurrence of a connectionfailure.

BRIEF SUMMARY OF THE INVENTION

[0004] According to a first aspect of the present invention, there isprovided a semiconductor device comprising:

[0005] a semiconductor substrate in which an integrated circuit isformed;

[0006] an insulating layer formed on the semiconductor substrate andhaving a first surface and a second surface which is higher than thefirst surface;

[0007] a first electrode formed to avoid the second surface andelectrically connected to the inside of the semiconductor substrate; and

[0008] a second electrode formed on the second surface and electricallyconnected to the inside of the semiconductor substrate.

[0009] According to a second aspect of the present invention, there isprovided an electronic device comprising:

[0010] the above semiconductor device;

[0011] a support member which includes a first support surface and asecond support surface lower than the first support surface;

[0012] a first interconnecting pattern formed on the first supportsurface; and

[0013] a second interconnecting pattern formed on the second supportsurface, wherein:

[0014] the first electrode of the semiconductor device faces and iselectrically connected to the first interconnecting pattern; and

[0015] the second electrode of the semiconductor device faces and iselectrically connected to the second interconnecting pattern.

[0016] According to a third aspect of the present invention, there isprovided an electronic device comprising the above semiconductor device.

[0017] According to a fourth aspect of the present invention, there isprovided an electronic instrument comprising the above electronicdevice.

[0018] According to a fifth aspect of the present invention, there isprovided a method of manufacturing a semiconductor device, comprising:

[0019] forming an insulating layer having a first surface and a secondsurface which is higher than the first surface on a semiconductorsubstrate in which an integrated circuit is formed;

[0020] forming a first electrode electrically connected to the inside ofthe semiconductor substrate to avoid the second surface; and

[0021] forming a second electrode electrically connected to the insideof the semiconductor substrate on the second surface.

[0022] According to a sixth aspect of the present invention, there isprovided a method of manufacturing an electronic device, comprising:

[0023] mounting the semiconductor device as defined in claim 1 on asupport member which includes a first support surface and a secondsupport surface lower than the first support surface, wherein:

[0024] a first interconnecting pattern is formed on the first supportsurface;

[0025] a second interconnecting pattern is formed on the second supportsurface; and

[0026] in the mounting step, the first electrode of the semiconductordevice is disposed to face the first interconnecting pattern to beelectrically connected, and the second electrode of the semiconductordevice is disposed to face the second interconnecting pattern to beelectrically connected.

[0027] According to a seventh aspect of the present invention, there isprovided a method of manufacturing an electronic device, comprising:

[0028] disposing the first electrode of the semiconductor device asdefined in claim 1 to face a first interconnecting pattern formed on afirst substrate to be electrically connected; and

[0029] disposing the second electrode of the semiconductor device toface a second interconnecting pattern formed on a second substrate to beelectrically connected; and

[0030] attaching the first substrate to the second substrate so that anelectrical connection portion of the first interconnecting pattern withthe first electrode overlaps the second substrate.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWING

[0031]FIG. 1 is a cross-sectional view taken along the line I-I shown inFIG. 2.

[0032]FIG. 2 is a plan view showing a semiconductor device according toone embodiment of the present invention.

[0033]FIGS. 3A to 3D are illustrative of a method of manufacturing asemiconductor device according to one embodiment of the presentinvention.

[0034]FIGS. 4A to 4C are illustrative of a method of manufacturing asemiconductor device according to one embodiment of the presentinvention.

[0035]FIG. 5 is illustrative of a modification of a semiconductor deviceaccording to one embodiment of the present invention.

[0036]FIG. 6 is illustrative of an electronic device according to oneembodiment of the present invention.

[0037]FIG. 7 is illustrative of a method of manufacturing an electronicdevice according to one embodiment of the present invention.

[0038]FIG. 8 is illustrative of a method of manufacturing an electronicdevice according to another embodiment of the present invention.

[0039]FIG. 9 is illustrative of a modification of an electronic deviceaccording to one embodiment of the present invention.

[0040]FIG. 10 shows an electronic instrument including a semiconductordevice according to one embodiment of the present invention.

[0041]FIG. 11 shows an electronic instrument including a semiconductordevice according to one embodiment of the present invention.

DETAILED DESCRIPTION OF THE EMBODIMENTS

[0042] An objective of the embodiments of the present invention is toenable mounting in a region with a level difference.

[0043] (1) According to a first embodiment of the present invention,there is provided a semiconductor device comprising:

[0044] a semiconductor substrate in which an integrated circuit isformed;

[0045] an insulating layer formed on the semiconductor substrate andhaving a first surface and a second surface which is higher than thefirst surface;

[0046] a first electrode formed to avoid the second surface andelectrically connected to the inside of the semiconductor substrate; and

[0047] a second electrode formed on the second surface and electricallyconnected to the inside of the semiconductor substrate.

[0048] Since the first and second electrodes are formed on the surfacesat different heights, the semiconductor device can be mounted in aregion with a level difference.

[0049] (2) The semiconductor device may further comprise a bump formedon at least one of the first and second electrodes.

[0050] (3) In the semiconductor device, the first and second electrodesmay be formed so as not to be electrically connected to the outside ofthe semiconductor substrate.

[0051] (4) In the semiconductor device, the insulating layer may includea first insulating layer formed on the semiconductor substrate andhaving the first surface, and a second insulating layer formed on thefirst insulating layer and having the second surface.

[0052] (5) In the semiconductor device, the second insulating layer maybe formed at a position close to one of end portions of thesemiconductor substrate.

[0053] (6) In the semiconductor device, a plurality of pads electricallyconnected to the inside of the semiconductor substrate may be formed onthe semiconductor substrate; and the semiconductor device may furthercomprise an interconnecting line which electrically connects one of thepads to the second electrode.

[0054] (7) In the semiconductor device, one of the pads may be the firstelectrode.

[0055] (8) The semiconductor device may comprise a plurality of thefirst electrodes, wherein at least one of the first electrodes is formedon the first surface.

[0056] (9) According to a second embodiment of the present invention,there is provided an electronic device comprising:

[0057] the semiconductor device as defined in claim 1;

[0058] a support member which includes a first support surface and asecond support surface lower than the first support surface;

[0059] a first interconnecting pattern formed on the first supportsurface; and

[0060] a second interconnecting pattern formed on the second supportsurface, wherein:

[0061] the first electrode of the semiconductor device faces and iselectrically connected to the first interconnecting pattern; and

[0062] the second electrode of the semiconductor device faces and iselectrically connected to the second interconnecting pattern.

[0063] This semiconductor device includes the first and secondelectrodes formed on the surfaces at different heights, and is mountedin a region with a level difference (or the first and second supportsurfaces).

[0064] (10) In the electronic device,

[0065] the support member may include first and second substrates whichoverlap each other to provide an overlapping region;

[0066] the first support surface may include a surface of the firstsubstrate opposite to the second substrate and within the overlappingregion; and

[0067] the second support surface may include a surface of the secondsubstrate on the side of the first substrate and outside the overlappingregion.

[0068] (11) According to a third embodiment of the present invention,there is provided an electronic device comprising the abovesemiconductor device.

[0069] (12) According to a fourth embodiment of the present invention,there is provided an electronic instrument comprising the aboveelectronic device.

[0070] (13) According to a fifth embodiment of the present invention,there is provided a method of manufacturing a semiconductor device,comprising:

[0071] forming an insulating layer having a first surface and a secondsurface which is higher than the first surface on a semiconductorsubstrate in which an integrated circuit is formed;

[0072] forming a first electrode electrically connected to the inside ofthe semiconductor substrate to avoid the second surface; and

[0073] forming a second electrode electrically connected to the insideof the semiconductor substrate on the second surface.

[0074] Since the first and second electrodes are formed on the surfacesat different heights, the semiconductor device can be mounted in aregion with a level difference.

[0075] (14) According to a sixth embodiment of the present invention,there is provided a method of manufacturing an electronic device,comprising:

[0076] mounting the semiconductor device as defined in claim 1 on asupport member which includes a first support surface and a secondsupport surface lower than the first support surface, wherein:

[0077] a first interconnecting pattern is formed on the first supportsurface;

[0078] a second interconnecting pattern is formed on the second supportsurface; and

[0079] in the mounting step, the first electrode of the semiconductordevice is disposed to face the first interconnecting pattern to beelectrically connected, and the second electrode of the semiconductordevice is disposed to face the second interconnecting pattern to beelectrically connected.

[0080] Since the first and second electrodes of the semiconductor deviceare formed on the surfaces at different heights, the semiconductordevice can be mounted in a region with a level difference (or the firstand second support surfaces).

[0081] (15) According to a sixth embodiment of the present invention,there is provided a method of manufacturing an electronic device,comprising:

[0082] disposing the first electrode of the semiconductor device asdefined in claim 1 to face a first interconnecting pattern formed on afirst substrate to be electrically connected; and

[0083] disposing the second electrode of the semiconductor device toface a second interconnecting pattern formed on a second substrate to beelectrically connected; and

[0084] attaching the first substrate to the second substrate so that anelectrical connection portion of the first interconnecting pattern withthe first electrode overlaps the second substrate.

[0085] According to this method of manufacturing an electronic device, alevel difference is formed by allowing the first substrate to overlapthe second substrate. However, since the first and second electrodes ofthe semiconductor device are formed on the surfaces at differentheights, it is possible to deal with the level difference.

[0086] The embodiments of the present invention are described below withreference to the drawings. FIG. 1 is illustrative of a semiconductordevice according to one embodiment of the present invention, and is across-sectional view taken along the line I-I shown in FIG. 2. FIG. 2 isa plan view illustrating the semiconductor device according to theembodiment of the present invention.

[0087] The semiconductor device includes a semiconductor substrate 10(semiconductor chip or semiconductor wafer). An integrated circuit 12 isformed in the semiconductor substrate 10. In the case where thesemiconductor substrate 10 is a semiconductor wafer, a plurality ofintegrated circuits 12 are formed in the semiconductor substrate 10.

[0088] A plurality of pads 14 are formed on the semiconductor substrate10. The pads 14 are electrically connected to the inside of thesemiconductor substrate 10. The pads 14 may be part (or ends) ofinterconnecting lines electrically connected to the integrated circuit12. The pads 14 may be disposed in the peripheral (or end) portions ofthe surface of the semiconductor substrate 10. The pads 14 may be formedalong four sides or two sides of the surface of the semiconductorsubstrate 10, for example. The pad 14 is formed of Al, for example.Although not illustrated in FIG. 1, the pad 14 may be formed so as tooverlap the integrated circuit 12.

[0089] An insulating layer 20 (electrical insulating layer in moredetail) is formed on the semiconductor substrate 10. The insulatinglayer 20 may include first and second insulating layers 22 and 24. Thefirst insulating layer 22 may be a passivation film. The firstinsulating layer 22 may be formed only of a material other than a resin(SiO₂ or SiN, for example), or may include a resin layer. An openingwhich exposes a part (center, for example) of the pad 14 is formed inthe first insulating layer 22. Specifically, the first insulating layer22 is formed to avoid at least the center of the pad 14. The firstinsulating layer 22 may be placed on the end portions of the pad 14.

[0090] The second insulating layer 24 is formed on the first insulatinglayer 22. The second insulating layer 24 may be formed of a resin suchas a polyimide resin, silicone-modified polyimide resin, epoxy resin,silicone-modified epoxy resin, benzocyclobutene (BCB), orpolybenzoxazole (PBO). The second insulating layer 24 may be formed onlyof a material other than a resin (SiO₂ or SiN, for example). The secondinsulating layer 24 may have elastic deformation properties (or a stressrelaxation function). The second insulating layer 24 may be formed in aregion of a part of the first insulating layer 22. The second insulatinglayer 24 may be formed at a position close to one of end portions of thesemiconductor substrate 10 (semiconductor chip or a region of asemiconductor wafer which becomes one semiconductor chip), for example.At least a part (only a part, for example) of the second insulatinglayer 24 may be formed in a region which overlaps the integrated circuit12. The second insulating layer 24 may have an inclined side surface.

[0091] The insulating layer 20 has first and second surfaces 26 and 28.The second surface 28 is formed to be higher than the first surface 26with respect to the semiconductor substrate 10. The first surface 26 maybe the surface (upper surface) of the first insulating layer 22. Thesecond surface 28 may be the surface (upper surface) of the secondinsulating layer 24.

[0092] The semiconductor device includes first and second electrodes 32and 34. The first and second electrodes 32 and 34 may not beelectrically connected outside the semiconductor substrate 10. The firstelectrode 32 is formed to avoid the second surface 28. The firstelectrode 32 shown in FIG. 1 is the pad 14. The first electrode 32 iselectrically connected with the inside of the semiconductor substrate 10(integrated circuit 12, for example). A bump 36 may be formed on thefirst electrode 32. The first electrodes 32 may be rearranged(pitch-converted) on the first insulating layer 22. The first electrodes32 may be arranged in a plurality of columns. In the case where thefirst electrodes 32 are arranged in a plurality of columns, the firstelectrodes 32 may be disposed in a staggered arrangement.

[0093] The second electrode 34 is formed on the second surface 28.Therefore, the second electrode 34 is formed at a position higher thanthe first electrode 32. In the example shown in FIG. 2, since the secondelectrodes 34 are disposed in a staggered arrangement, the pitch can beincreased. The second electrodes 34 may be disposed in a single column.A bump 38 may be formed on the second electrode 34. The bumps 36 and 38may be formed of the same material. The bumps 36 and 38 may be formed ofsolder, Ni, Au, Cr, Al, or the like. The bumps 36 and 38 may be formedby a plurality of layers.

[0094] The second electrode 34 is electrically connected with the insideof the semiconductor substrate 10 (integrated circuit 12, for example).The pad 14 may be electrically connected with the second electrode 34through an interconnecting line 40. The interconnecting line 40 isformed from the pad 14 so as to extend to the second surface 28. Theinterconnecting line 40 may pass over the first surface 26.

[0095]FIGS. 3A to 4C are illustrative of a method of manufacturing thesemiconductor device according to one embodiment of the presentinvention. As shown in FIG. 3A, the insulating layer 20 (first andsecond insulating layers 22 and 24, for example) having the firstsurface 26 and the second surface 28 higher than the first surface 26 isformed on the semiconductor substrate 10. In the case where thesemiconductor substrate 10 is a semiconductor wafer, the secondinsulating layer 24 is formed in the region which becomes thesemiconductor chip. The second insulating layer 24 is formed in theregion which overlaps the integrated circuit 12. The second insulatinglayer 24 may be formed by patterning (etching, for example) aninsulating layer (resin layer, for example) formed on the semiconductorsubstrate 10 (entire surface of the semiconductor substrate, forexample).

[0096] As shown in FIG. 3B, a single-layer or multilayer conductive film50 is formed. The conductive film 50 may be formed by using a TiW filmand a Cu film formed on the TiW film, for example. The conductive film50 may be formed by sputtering. The conductive film 50 may be formedover the entire first and second surfaces 26 and 28.

[0097] As shown in FIG. 3C, a first resist layer 52 (resin layer, forexample) is formed on the conductive film 50 so as to exclude theregions of the first and second electrodes 32 and 34. In the case offorming the interconnecting line 40 (see FIG. 2), the first resist layer52 is formed to exclude the region of the interconnecting line 40. Aresist layer formed on the conductive film 50 (entire surface of theconductive film 50, for example) may be patterned by using aphotolithographic step and the like.

[0098] As shown in FIG. 3D, a first metal layer 54 (Cu layer, forexample) is formed on the surface of the conductive film 50 exposed fromthe first resist layer 52 by electroplating using the conductive film 50as an electrode. The first metal layer 54 may be formed by electrolessplating. The first resist layer 52 is then removed.

[0099] As shown in FIG. 4A, the conductive film 50 is etched by usingthe first metal layer 54 as a mask. The second electrode 34 and theinterconnecting line 40 can be formed by this step. The second electrode34 is formed on the second surface 28. Note that the pad 14 is the firstelectrode 32 in this embodiment.

[0100] As shown in FIG. 4B, a second resist layer 56 (resin layer, forexample) is formed so as to exclude the formation regions of the bumps36 and 38 (at least the center of the first and second electrodes 32 and34).

[0101] As shown in FIG. 4C, a single-layer or multilayer second metallayer 58 (solder, Ni, Au, Cr, or Al, for example) is formed on thesurface of the first metal layer 54 exposed from the second resist layer56 (formation regions of the bumps 36 and 38). The bumps 36 and 38 areformed by this step.

[0102] In the case where the semiconductor substrate 10 is asemiconductor wafer, the method of manufacturing the semiconductordevice may include a step of cutting (dicing) the semiconductorsubstrate 10. The rest of the details of the manufacturing method isderived from the configuration of the above-described semiconductordevice. According to this embodiment, since the first and secondelectrodes 32 and 34 are formed on the surfaces at different heights,the semiconductor device can be mounted in a region with a leveldifference.

[0103]FIG. 5 is illustrative of a modification of the semiconductordevice according to one embodiment of the present invention. Thesemiconductor device shown in FIG. 5 includes a first electrode 60formed on the first surface 26. The rest of the configuration is thesame as the configuration of the above-described semiconductor device.The first electrode 60 is electrically connected with one of the pads 14through an interconnecting line 62. Since the first electrodes 32 andthe first electrodes 60 are disposed in a staggered arrangement, thepitch can be increased. The present invention also includes thisembodiment.

[0104]FIG. 6 is illustrative of an electronic device according to oneembodiment of the present invention. The electronic device includes theabove-described semiconductor device 70. The electronic device includesa support member 80. The support member 80 includes a first supportsurface 82 and a second support surface 84 lower than the first supportsurface 82. The support member 80 may include first and secondsubstrates 86 and 88. The first and second substrates 86 and 88 areattached so as to have an overlapping region. The first and secondsubstrates 86 and 88 may be attached by using an adhesive or the like.The first substrate 86 is a flexible substrate, for example. Anelectronic part 72 may be mounted on the first substrate 86. The secondsubstrate 88 is at least a part of an electronic panel (liquid crystalpanel, electroluminescent panel, or the like). In a liquid crystalpanel, another substrate 74 is provided so as to face the secondsubstrate 88. The second substrate 88 is disposed to project from thesubstrate 74. A resin 76 may be provided on the second support surface84 of the second substrate 88 in the peripheral section of the substrate74.

[0105] The surface of the first substrate 86 opposite to the secondsubstrate 88 in the overlapping region with the second substrate 88 isthe first support surface 82. The surface of the second substrate 88 onthe side of the first substrate 86 outside the overlapping region withthe first substrate 86 is the second support surface 84.

[0106] A first interconnecting pattern 90 is formed on the first supportsurface 82, and a second interconnecting pattern 92 is formed on thesecond support surface 84. The first electrode 32 of the semiconductordevice 70 is electrically connected face-to-face with the firstinterconnecting pattern 90. The second electrode 34 of the semiconductordevice 70 is electrically connected face-to-face with the secondinterconnecting pattern 92.

[0107] According to this embodiment, the semiconductor device 70includes the first and second electrodes 32 and 34 formed on thesurfaces at different heights, and is mounted in the region with a leveldifference (first and second support surfaces 82 and 84). Since only apart of the semiconductor device 70 overlaps the first substrate 86, thesize of the first substrate 86 can be reduced.

[0108]FIG. 7 is illustrative of a method of manufacturing the electronicdevice according to one embodiment of the present invention. Thismanufacturing method includes a step of mounting the semiconductordevice 70 on the support member 80 having the first support surface 82and the second support surface 84 lower than the first support surface82. Specifically, the first and second substrates 86 and 88 are attachedbefore mounting the semiconductor device 70. The first electrode 32 ofthe semiconductor device 70 is electrically connected face-to-face withthe first interconnecting pattern 90. The second electrode 34 of thesemiconductor device 70 is electrically connected face-to-face with thesecond interconnecting pattern 92. An anisotropic conductive material 94(anisotropic conductive film or anisotropic conductive paste) may beused to electrically connect the electrode with the interconnectingpattern.

[0109] According to this embodiment, since the first and secondelectrodes 32 and 34 of the semiconductor device 70 are formed on thesurfaces at different heights, the semiconductor device 70 can bemounted in a region with a level difference (first and second supportsurfaces 82 and 84).

[0110]FIG. 8 is illustrative of a method of manufacturing an electronicdevice according to another embodiment of the present invention. In thismanufacturing method, the first electrode 32 of the semiconductor device70 is electrically connected face-to-face with the first interconnectingpattern 90 formed on the first substrate 86. Specifically, thesemiconductor device 70 is mounted on the first substrate 86 beforebeing mounted on the second substrate 88. The semiconductor device 70and the first substrate 86 are then attached to the second substrate 88.In more detail, the second electrode 34 of the semiconductor device 70is electrically connected face-to-face with the second interconnectingpattern 92 formed on the second substrate 88. The anisotropic conductivematerial 94 (anisotropic conductive film or anisotropic conductivepaste) may be used to electrically connect the electrode with theinterconnecting pattern. The first substrate 86 is attached to thesecond substrate 88 so that the electrical connection section of thefirst interconnecting pattern 90 with the first electrode 34 overlapsthe second substrate 88. The anisotropic conductive material 94 may beused for attachment.

[0111] According to this embodiment, a level difference is formed byallowing the first and second substrates 86 and 88 to overlap. However,since the first and second electrodes 32 and 34 of the semiconductordevice 70 are formed on the surfaces at different heights, it ispossible to deal with the level difference.

[0112]FIG. 9 is illustrative of a modification of an electronic deviceaccording to one embodiment of the present invention. In the electronicdevice shown in FIG. 9, a plurality of the semiconductor devices 70 aremounted on the support member 80. The above description applies to thedetails of the structure and the mounting form of the semiconductordevice 70. The present invention also includes this embodiment.

[0113]FIGS. 10 and 11 respectively show a notebook-type personalcomputer 1000 and a portable telephone 2000 as examples of electronicinstruments including the semiconductor device or the electronic deviceaccording to the embodiments of the present invention.

[0114] The present invention is not limited to the above-describedembodiments, and various modifications can be made. For example, thepresent invention includes various other configurations substantiallythe same as the configurations described in the embodiments (infunction, method and effect, or in objective and effect, for example).The present invention also includes a configuration in which anunsubstantial portion in the described embodiments is replaced. Thepresent invention also includes a configuration having the same effectsas the configurations described in the embodiments, or a configurationable to achieve the same objective. Further, the present inventionincludes a configuration in which a publicly known technique is added tothe configurations in the embodiments.

What is claimed is:
 1. A semiconductor device comprising: asemiconductor substrate in which an integrated circuit is formed; aninsulating layer formed on the semiconductor substrate and having afirst surface and a second surface which is higher than the firstsurface; a first electrode formed to avoid the second surface andelectrically connected to the inside of the semiconductor substrate; anda second electrode formed on the second surface and electricallyconnected to the inside of the semiconductor substrate.
 2. Thesemiconductor device as defined in claim 1, further comprising a bumpformed on at least one of the first and second electrodes.
 3. Thesemiconductor device as defined in claim 1, wherein the first and secondelectrodes are formed so as not to be electrically connected to theoutside of the semiconductor substrate.
 4. The semiconductor device asdefined in claim 1, wherein the insulating layer includes a firstinsulating layer formed on the semiconductor substrate and having thefirst surface, and a second insulating layer formed on the firstinsulating layer and having the second surface.
 5. The semiconductordevice as defined in claim 4, wherein the second insulating layer isformed at a position close to one of end portions of the semiconductorsubstrate.
 6. The semiconductor device as defined in claim 1, wherein: aplurality of pads electrically connected to the inside of thesemiconductor substrate are formed on the semiconductor substrate; andthe semiconductor device further comprise an interconnecting line whichelectrically connects one of the pads to the second electrode.
 7. Thesemiconductor device as defined in claim 6, wherein one of the pads isthe first electrode.
 8. The semiconductor device as defined in claim 6,comprising a plurality of the first electrodes, wherein at least one ofthe first electrodes is formed on the first surface.
 9. An electronicdevice comprising: the semiconductor device as defined in claim 1; asupport member which includes a first support surface and a secondsupport surface lower than the first support surface; a firstinterconnecting pattern formed on the first support surface; and asecond interconnecting pattern formed on the second support surface,wherein: the first electrode of the semiconductor device faces and iselectrically connected to the first interconnecting pattern; and thesecond electrode of the semiconductor device faces and is electricallyconnected to the second interconnecting pattern.
 10. The electronicdevice as defined in claim 9, wherein: the support member includes firstand second substrates which overlap each other to provide an overlappingregion; the first support surface includes a surface of the firstsubstrate opposite to the second substrate and within the overlappingregion; and the second support surface includes a surface of the secondsubstrate on the side of the first substrate and outside the overlappingregion.
 11. An electronic device comprising the semiconductor device asdefined in claim
 1. 12. An electronic instrument comprising theelectronic device as defined in claim
 10. 13. An electronic instrumentcomprising the electronic device as defined in claim
 11. 14. A method ofmanufacturing a semiconductor device, comprising: forming an insulatinglayer having a first surface and a second surface which is higher thanthe first surface on a semiconductor substrate in which an integratedcircuit is formed; forming a first electrode electrically connected tothe inside of the semiconductor substrate to avoid the second surface;and forming a second electrode electrically connected to the inside ofthe semiconductor substrate on the second surface.
 15. A method ofmanufacturing an electronic device, comprising: mounting thesemiconductor device as defined in claim 1 on a support member whichincludes a first support surface and a second support surface lower thanthe first support surface, wherein: a first interconnecting pattern isformed on the first support surface; a second interconnecting pattern isformed on the second support surface; and in the mounting step, thefirst electrode of the semiconductor device is disposed to face thefirst interconnecting pattern to be electrically connected, and thesecond electrode of the semiconductor device is disposed to face thesecond interconnecting pattern to be electrically connected.
 16. Amethod of manufacturing an electronic device, comprising: disposing thefirst electrode of the semiconductor device as defined in claim 1 toface a first interconnecting pattern formed on a first substrate to beelectrically connected; and disposing the second electrode of thesemiconductor device to face a second interconnecting pattern formed ona second substrate to be electrically connected; and attaching the firstsubstrate to the second substrate so that an electrical connectionportion of the first interconnecting pattern with the first electrodeoverlaps the second substrate.